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| 2SB1708 Transistors Low frequency amplifier 2SB1708 !Application Low frequency amplifier Driver !External dimensions (Units : mm) 2.8 1.6 0.95 0.95 (1) 1.9 0.4 (3) !Features 1) A collector current is large. (3A) 2) VCE(sat) -250mV At IC = -1.5A / IB = -30mA (2) 2.9 1.0MAX 0.85 0.16 0.3 0.6 0 0.1 Each lead has same dimensions 0.7 Abbreviated symbol : YY ROHM : TSMT3 (1) Base (2) Emitter (3) Collector !Absolute maximum ratings (Ta=25C) Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg Single pulse, PW=1ms !Packaging specifications Limits -30 -30 -6 -3 -6 500 150 -55~+150 Unit V V V A A mW C C Package Type Code Basic ordering unit (pieces) 2SB1708 Taping T146 3000 Parameter Collector-base voltage !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -30 -30 -6 - - - 270 - - Typ. - - - - - -180 - 200 40 Max. - - - -100 -100 -250 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=-10A IC=-1mA IE=-10A VCB=-30V VEB=-6V IC=-1.5A, IB=-30mA VCE=-2V, IC=-200mA VCE=-2V, IE=200mA, f=100MHz VCB=-10V, IE=0A, f=1MHz 1/2 2SB1708 Transistors !Electrical characteristic curves 1000 DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1 BASE SATURATION VOLTAGE : VBE (sat) (V) 10 IC/IB=20/1 Pulsed Ta=125C Ta=25C Ta=-40C IC/IB=20/1 Pulsed 100 Ta=125C Ta=25C Ta=-40C 0.1 1 Ta=-40C Ta=25C Ta=125C 0.01 VCE=-2V Pulsed 10 0.001 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 0.1 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC Current Gain vs. Collector Current Fig.2 Collector-Emitter Saturation Voltage vs. Collector Current Fig.3 Base-emitter saturation voltage vs. Collector Current EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) TRANSITION FREQUENCY : fT (MHz) 10 COLLECTOR CURRENT : IC (A) VCE=-2V Pulsed 1 Ta=125C Ta=25C Ta=-40C 1000 Cib 100 Cob 1000 Ta=25C VCE=-2V f=100MHz 0.1 100 10 Ta=25C IC=0A f=1MHz 1 0.001 0.01 0.01 0.001 0.1 1 10 0.1 1 10 100 10 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE (V) EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) EMITTER CURRENT : IE (A) Fig.4 Grounded Emitter Propagation Characteristics Fig.5 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage Fig.6 Gain Bandwidth Product vs. Emitter Current 10000 SWITCHING TIME : (ns) Ta=25C VCE=-12V IC/IB=20/1 Pulsed 1000 100 tstg 10 0.01 0.1 1 tf tdon tr 10 COLLECTOR CURRENT : IC (A) Fig.7 Switching Time 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0 |
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